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Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56
Figure 1: (a) Schematic representation of the proposed RTD. Carbon, boron and nitrogen atoms, are depicted in...
Figure 2: All possible substitutional defects at the interfaces of RTD based on AGNR/ABNNR heterojunctions. C...
Figure 3: Effect of substitutional defects on the energy bandstructure of 19-AGNR and 19-ABNNR. Carbon, boron...
Figure 4: Effect of CB and NC defects at the interface between the left ABNNR barrier and the well on (a) the...
Figure 5: Effect of BC and CN defects at the interface between the right barrier and the well on (a) current–...
Figure 6: Effect of CB and NC defects at the interface between the right barrier and the right spacer on (a) ...
Figure 7: Effect of BC and CN defects at the interface between the left barrier and the left spacer on (a) cu...
Beilstein J. Nanotechnol. 2014, 5, 1569–1574, doi:10.3762/bjnano.5.168
Figure 1: Top view of a 5h-2BN-ZGNR (left panel) and the same GNR with surface roughness (right panel). The b...
Figure 2: (a) Averaged transmission of 10 nm length 4h-2BN-ZGNR as function of the energy for various SR ampl...
Figure 3: Schematic representation of the simulated device structure. The gate insulator is assumed to be 2.5...
Figure 4: (a) Averaged transfer characteristic (b) on-current (c) off-current and (d) on-/off-current ratio o...
Figure 5: (a) The average transfer characteristic of 10 nm length devices with SiO2 substrate for different d...